Laser Diode Chip Having Coated Laser Facet

ABSTRACT

A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.

This patent application is a national phase filing under section 371 ofPCT/EP2015/053218, filed Feb. 16, 2015, which claims the priority ofGerman patent application 10 2014 102 360.9, filed Feb. 24, 2014, eachof which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The invention relates to a laser diode chip having at least one laserfacet with a coating.

BACKGROUND

Laser diode chips capable of emitting in the UV spectral range, thevisible spectral range or the infrared spectral range, for example, areused in many applications such as projection devices, in lightingtechnology or optical sensors, for example for gesture recognition.

Many laser diode chip applications utilize the achievable high opticalpower density. However, the high optical power density reached in laserdiodes results in the light-emitting laser facet being particularlyexposed to very high electric, optical and thermal loads. In particular,it turned out that oxidation of the laser facet may occur when operatingthe laser diode under the influence of moisture, the oxidation leadingto a degradation of the laser diode chip. Furthermore, there is a riskof particles adsorbing at the laser facet as a result of theelectrostatic interaction when operating the laser diode chip, what maylead to shadowing effects in the far field, a reduced slope of the lasercharacteristic curve or overheating of the mirror and even thecatastrophic optical damage (COD, German: Zerstörung).

Further, high sensitivity of the laser facets requires very high effortsin the mounting of the laser diode chip.

SUMMARY OF THE INVENTION

Embodiments of the invention provide a laser diode chip which ischaracterized by improved long term stability.

According to at least one embodiment, the laser diode chip has at leastone laser facet with a coating. In particular, the laser facet forms oneof the resonator mirrors of the laser diode chip. In particular, thelaser diode chip may be an edge emitter laser diode chip in which theresonator mirror is formed by two laser facets located opposite to oneanother. In this case, preferably both laser facets each have onecoating, where the coatings may be different from one another at leastin their optical properties, particularly the reflectivity. Preferably,at least the laser facet of the laser diode chip serving as theradiation exit surface has the coating described herein.

In the laser diode chip, the coating of the at least one laser facetadvantageously comprises at least one inorganic layer, preferablymultiple inorganic layers, and at least one organic layer. In otherwords, the coating is an inorganic-organic hybrid structure.

The at least one inorganic layer contained in the coating may be areflection-increasing or reflection-reducing layer, for example. Inparticular, the coating may contain multiple inorganic layers, which areat least partially contained in a reflection-reducing orreflection-increasing layer sequence. The reflectivity of the laserfacet can specifically be adjusted by the reflection-increasing orreflection-decreasing layer or layer sequence.

Advantageously, at least one additional function of the coating may berealized by the at least one organic layer contained in the coating. Inparticular, the at least one organic layer may have the function of aprotective layer, which particularly improves the long-term stability ofthe laser diode chip. The at least one organic layer particularly allowsreducing the diffusion of moisture and the adsorption of particles. As aresult, the inorganic-organic hybrid structure is characterized by animproved protection of the laser diode chip against degradation whencompared to purely inorganic coatings.

The at least one inorganic layer of the coating is advantageouslyproduced by atomic layer deposition (ALD), chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PEVCD), ion beamdeposition (IBD) or ion plating (IP).

The at least one organic layer is preferably produced by molecular vapordeposition (MVD) or molecular layer deposition (MLD). These depositionmethods are particularly suitable for producing organic layers servingas a diffusion barrier. Furthermore, the at least one organic layer canbe produced by a physical vapor deposition (PVD) method, a sol gelprocess or by dip coating, for example.

According to one embodiment, the at least one organic layer comprises adiffusion barrier layer. The organic diffusion barrier layerparticularly forms a barrier for moisture and/or oxygen. This achievesreducing a degradation of the laser facet, particularly caused byoxidation.

Furthermore, the at least one organic layer provides the advantage ofbeing relatively elastic when compared to inorganic dielectric layers,so that the organic layer is capable of elastic deformation in the caseof operational temperature changes. This achieves reducing the risk ofcrack formation in the coating caused by thermally-induced stress.

The at least one organic layer, particularly the diffusion barrierlayer, preferably contains an alkane, an alkene, an alkyne, acycloalkane, a cycloalkene, a polyamide or an aluminum alkoxide.

According to an advantageous configuration, the at least one organiclayer comprises an organic cover layer. In this configuration, theorganic cover layer is the outmost layer of the coating adjacent to thesurrounding medium.

Advantageously, the organic cover layer is a hydrophobic layer and/or anon-stick layer. In this case, the surface of the coating facing awayfrom the laser facet preferably is hydrophobic and/oradhesion-inhibiting. Penetration of moisture and/or particle adsorptionis advantageously reduced by the hydrophobic layer and/or the non-sticklayer. Advantageously, the organic cover layer has a contact angle forwater greater than 90°. The contact angle is a measure for thewettability of the surface with water.

The organic cover layer may particularly comprise carbon nanotubes, anorganic fluorine or sulfur compound, a thiol or a silane. Thesematerials are particularly suitable for the formation of a hydrophobiclayer. Preferably, the organic cover layer is a monolayer, particularlya self-assembled monolayer (SAM).

In another preferred configuration, the organic cover layer contains achlorosilane, an amine, an alcohol, a carbon acid, a siloxane or adimethylamino silane. These materials are particularly suitable forformation of a non-stick layer. The non-stick layer is preferablyapplied by a molecular vapor deposition (MVD) method.

The water-repellent or adhesion-inhibiting property of the organic coverlayer may depend on the material of the cover layer, particularly thechemical properties of the surface, and/or the structure thereof. Inparticular, the organic cover layer may have a surface structure bymeans of which a water-repellant effect, the so-called lotus effect, isachieved.

According to a preferred configuration, the at least one inorganic layercomprises a heat conductive layer. Advantageously, the heat conductivelayer allows advantageously dissipating heat that develops duringoperation of the laser diode chip at the laser facet. Transparentconductive oxides such as ITO or ZnO are preferred materials for theheat conductive layer. Further preferred materials include GaN, AlN,diamond-like carbon (DLC), SiC or graphene. The heat conductive layermay particularly also be electrically conductive. This is why it isadvantageous to not attach or apply the heat conductive layer directlyto the laser facet, since otherwise there would be a short-circuit riskfor the semiconductor layers of the laser diode chip.

In the case that the heat conductive layer has an electric conductivityas low as not to pose a risk of short circuits, the heat conductivelayer may also be directly applied or attached to the laser facet. Inthis case, heat can be dissipated from the laser diode chip in aparticularly good manner.

In a preferred configuration, the heat conductive layer is arrangedbetween a first organic diffusion barrier layer and a second organicdiffusion barrier layer. This is advantageous since the organicdiffusion barrier layers are comparatively elastic and therefore capableof compensating a temperature-dependent expansion of the heat conductivelayer preferably in the elastic expansion range.

In a preferred configuration, the at least one inorganic layer comprisesa dielectric protective layer, which is directly adjacent to the laserfacet. Preferably, the dielectric protective layer is a layer producedby atomic layer deposition. Atomic layer deposition allows producingespecially dense layers, the dense layers particularly forming adiffusion barrier for moisture. The dielectric protective layerpreferably comprises one oxide, nitride or oxynitride.

The coating may particularly comprise multiple inorganic layers.According to an advantageous configuration, the inorganic layers are atleast partially arranged in a reflection-increasing orreflection-decreasing layer sequence. The reflection-increasing orreflection-decreasing layer sequence may particularly comprisealternating layers having a refractive index that alternates betweenhigher and lower values.

The inorganic layers of the coating, particularly thereflection-increasing or reflection-decreasing layer sequence,preferably contain dielectric materials, particularly oxides, nitridesor oxynitrides. The inorganic layers may particularly comprise at leastone of the materials SiO₂, Al₂O₃, TiO₂, Ta₂O₅, Si₃N₄, ZrO₂, HfO₂, Nb₂O₅,Y₂O₃, Ho₂O₃, CeO₃, Lu₂O₃, V₂O₅, HfZrO, MgO, TaC, ZnO, CuO, In₂O₃, Yb₂O₃,Sm₂O₃, Nd₂O₃, Sc₂O₃, B₂O₃, Er₂O₃, Dy₂O₃, Tm₂O₃, SrTiO₃, BaTiO₃, PbTiO₃,PbZrO₃, Ga₂O₃, HfAlO or HfTaO.

It is possible that the reflection-increasing or reflection-decreasinglayer sequence consists exclusively of inorganic layers.

In a preferred configuration, the coating comprises a heat conductivelayer arranged between a dielectric reflection-increasing orreflection-decreasing layer sequence and an organic diffusion barrierlayer. In this case, the heat conductive layer is advantageouslyinsulated from the laser facet by the dielectric reflection-increasingor reflection-decreasing layer sequence, which may therefore alsocomprise an electrically-conductive material.

In a preferred configuration, the reflection-increasing orreflection-decreasing layer sequence contains both inorganic and organiclayers, particularly alternating inorganic and organic layers. Thereflection-increasing or reflection-decreasing layer sequence mayparticularly comprise alternating inorganic layers having a highrefractive index and organic layers having a low refractive index, or,as an alternative, alternating inorganic layers having a low refractiveindex and organic layers having a high refractive index. In thisconfiguration, the inorganic and/or organic layers advantageously have athickness between 1 nm and 350 nm, preferably between 5 nm and 200 nm,and particularly preferably between 10 nm and 100 nm.

The number of layers in the reflection-increasing layer sequenceadvantageously ranges between 2 and 50, particularly preferably between4 and 20.

BRIEF DESCRIPTION OF THE DRAWINGS

In the following, the invention will be explained in greater detail byexemplary embodiments in conjunction to FIGS. 1 to 8.

Shown are in:

FIG. 1 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to a first exemplary embodiment,

FIG. 2 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to a second exemplary embodiment,

FIG. 3 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to a third exemplary embodiment,

FIG. 4 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to a fourth exemplary embodiment,

FIG. 5 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to a fifth exemplary embodiment,

FIG. 6 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to a sixth exemplary embodiment,

FIG. 7 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to a seventh exemplaryembodiment, and

FIG. 8 a schematic illustration of a cross-section through a partialregion of a laser diode chip according to an eighth exemplaryembodiment.

Equal or equivalent components are marked with the same referencenumeral in the figures, respectively. The components shown as well asthe proportions of the components amongst one another are not to beconsidered to be true to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The laser chip diode 1 schematically shown in cross-section in FIG. 1comprises a semiconductor layer sequence attached to a substrate 6.

For example, the semiconductor layer sequence contains a buffer layer 2applied to the substrate 6, a first cladding layer 3 a, a firstwaveguide layer 4 a, an active layer 5, a second waveguide layer 4 b anda second cladding layer 3 b. The semiconductor layer sequence maycontain further layers, which are not shown for simplification.Furthermore, at least partial regions of the semiconductor layersequence may be structured, for example as a ridge waveguide structure.Suitable waveguide structures for laser diode chips are known per se andthus not shown in detail for simplification.

The active layer 5 of the edge-emitting semiconductor laser can beconfigured as pn-junction, double hetero structure, single quantum wellstructure or multi quantum well structure, for example. In the scope ofthe application, the term quantum well structure includes any structurein which charge carriers receive quantization of their energy states byconfinement. In particular, the term quantum well structure does notcontain information regarding the dimensionality of the quantization.Thus, it comprises, inter alia, quantum wells, quantum wires and quantumdots and any combination of these structures.

The semiconductor layer sequence of the laser diode chip 1 is preferablybased on a III-V-compound semiconductor material, particularly on anarsenide, nitride or phosphide compound semiconductor material. Forexample, the semiconductor layer sequence may containIn_(x)Al_(y)Ga_(1-x-y)As, In_(x)Al_(y)Ga_(1-x-y)N orIn_(x)Al_(y)Ga_(1-x-y)P, each with 0≦x≦1, 0≦y≦1 and x+y≦1. Here, theIII-V-compound semiconductor material does not need to have amathematically-exact composition according to one of the above formulas.It may rather comprise one or multiple dopants as well as additionalcomponents that do not substantially change the physical properties ofthe material. However, the above formulas do only contain the essentialcomponents of the crystal lattice for simplification, even though thecomponents may be replaced by minor quantities of further materials.

Here, material selection is effected by the desired emission wavelengthof the laser diode chip 1. The substrate 6 is selected by the preferablyepitaxially-grown semiconductor sequence and may particularly compriseGaAs, sapphire, SiC, GaN or silicon.

For the electric contacting of the laser diode chip, a first contactlayer 7 is arranged on a rear side of the substrate 6 facing away fromthe semiconductor layer sequence and a second contact layer 8 isarranged on the side of the semiconductor layer sequence facing awayfrom the substrate 6.

The laser diode chip 1 comprises a laser facet 9 provided with a coating10. The laser facet 9 can particularly form one of the resonator mirrorsof the laser diode chip 1. A further laser facet, which is not shown inthe detail and which is located opposite the laser facet 9 can form asecond resonator mirror of the laser diode chip and be provided with afurther coating, which may have the same advantageous configurations asthe coating 10 of the laser facet 9 to be described in the following. Inthis case, the further coating does not need to be identical to thecoating 10 but may have optical properties different from that of thecoating 10, particularly a different reflectivity, for example.

The laser facet 9 provided with the coating 10 can particularly beprovided as a radiation exit surface of the laser diode chip 1.

In the exemplary embodiment, coating 10 comprises a firstreflection-increasing or reflection-decreasing layer sequence ii, whichhas multiple alternating first layers 13 and second layers 14. Thereflection-increasing or reflection-decreasing layer sequence 11 in theexemplary embodiment has three layer pairs composed of first layers 13and second layers 14, that is a total number of 6 layers. Generally, thenumber of layers 13, 14 is between 2 and 50, preferably between 4 and20. For example, the alternating layers 13, 14 are inorganic dielectriclayers respectively, which alternate between having a high refractiveindex or a low refractive index. The reflection-increasing orreflection-decreasing layer sequence 11 may have alternating firstlayers 13 made of Al₂O₃ and second layers 14 made of one of thematerials TiO₂, ZrO₂ or Ta₂O₅, for example. In this configuration, thefirst layers each have a low refractive index and the second layers eachhave a high refractive index. As an alternative it is also possible forthe first layers to have a high refractive index, the second layershaving a low refractive index. Furthermore, the reflection-increasing orreflection-decreasing layer sequence 11 may also have or comprise anuneven number of layers, i.e., a further layer with a low or highrefractive index is contained in the layer sequence 11 in addition tothe layer pairs.

In the exemplary embodiment, coating 10 further comprises a secondreflection-increasing or reflection-decreasing layer sequence 12, whichis composed of alternating third layers 15 and fourth layers 16, whichjust like in the first reflection-increasing or reflection-decreasinglayer sequence 11, advantageously have alternating low refractiveindices and high refractive indices. Use of two successivereflection-increasing or reflection-decreasing layer sequences 11, 12may be appropriate, for example to adjust the material of the firstreflection-increasing or reflection-decreasing layer sequence ii withrespect to the thermal expansion coefficient to the adjacentsemiconductor material of the laser diode chip. The materials of thesecond reflection-increasing or reflection-decreasing layer sequence 11may be selected for obtaining a most great difference in theirrefractive indices, for example.

However, as an alternative, it is also possible that coating 10 onlycontains one reflection-increasing or reflection-decreasing layersequence 11. It is also possible that a reflection-increasing orreflection-decreasing single layer is used instead of the first and/orsecond reflection-increasing or reflection-decreasing layer sequence 11,12.

It is not mandatory for the first reflection-increasing orreflection-decreasing layer sequence 11 or the secondreflection-increasing or reflection-decreasing layer sequence 12 toconsist exclusively of inorganic layers. As an alternative, it is ratheralso possible that at least one of the reflection-increasing orreflection-decreasing layer sequences 11, 12 comprises alternatinginorganic and organic layers. In one configuration, the firstreflection-increasing or reflection-decreasing layer sequence 11comprises organic first layers 13 and inorganic second layers 14, forexample. In this configuration, the organic layers 13 integrated in thereflection-increasing or reflection-decreasing layer sequence 11 providethe advantage that they are comparatively elastic when compared toinorganic dielectric layers. This is particularly advantageous iftemperature-dependent stress occurs during operation of the laser diode1.

Furthermore, coating 10 advantageously comprises a cover layer 20, whichis a hydrophobic organic layer in the exemplary embodiment of FIG. 1.The hydrophobic organic cover layer 20 has a contact angle for watergreater than 90°. The hydrophobic organic cover layer 20 particularlyserves for protection of the laser facet 9 against moisture. Thehydrophobic organic cover layer 20 may contain carbon nanotubes, organicfluorine or sulfur compounds, which in particular contain thiol orsilane groups. The hydrophobic organic cover layer 20 preferably is amonolayer, particularly a self-assembled monolayer.

FIG. 2 illustrates a second exemplary embodiment of the laser diode chip1. This embodiment is different from the first exemplary embodiment inthat the an organic layer follows the second reflection-increasing orreflection-decreasing layer sequence 12 in the growth direction of thelayer 10, which particularly is a diffusion barrier layer 21 forreducing the diffusion of oxygen or moisture. As a result, the laserfacet 9 is even better protected against oxidation.

The organic diffusion barrier layer 21 preferably contains an alkane,alkene, alkyne, a cycloalkane, cycloalkene, a polyamide or an aluminumalkoxide. Apart from that, the second exemplary embodiment correspondsto the above described first exemplary embodiment.

In the third exemplary embodiment shown in FIG. 3, a coating 10 isapplied to the laser facet 9, which comprises, starting from the laserfacet 9, a dielectric protective layer 18, a reflection-increasing orreflection-decreasing layer sequence ii and an organic diffusion barrierlayer 21. Advantageously, the dielectric protective layer 18 is directlyadjacent to the laser facet 9 and preferably is a layer produced byatomic layer deposition. Atomic layer deposition allows depositingespecially dense dielectric layers, the layers providing an especiallygood protection against the penetration of moisture. The dielectricprotective layer preferably comprises an oxide, nitride or oxynitride.The dielectric protective layer 18 may comprise SiO₂, Si(O_(x)N_(1-x))₂,Al_(S)O₃ or Al₂(O_(x)N_(1-x))₃ or combinations thereof, for example.

The reflection-increasing or reflection-decreasing layer sequence 11following the dielectric protective layer 18 corresponds to the firstexemplary embodiment regarding the advantageous configurations thereof.

As in the second exemplary embodiment, the organic layer 21 may serveparticularly as a diffusion barrier. In this exemplary embodiment, itsimultaneously forms the cover layer of the coating 10. The organicdiffusion barrier layer 21 provides the advantage that it iscomparatively elastic and thus particularly tear-resistant when comparedto inorganic layers. This reduces the risk that cracks occur in thediffusion barrier layer 21 during operation of the laser diode chip 1,for example caused by temperature-dependent stress.

In the fourth exemplary embodiment shown in FIG. 4, a coating 10 isapplied to the laser facet 9, the coating comprising, starting from thelaser facet 9, a reflection-increasing or reflection-decreasing layersequence 11, a heat-conductive barrier layer 21 and a hydrophobicorganic layer 20 as a cover layer.

This exemplary embodiment is different from the above described secondexemplary embodiment in that the heat-conductive layer 17 isadvantageously arranged between the reflection-increasing orreflection-decreasing layer sequence ii and the organic diffusionbarrier layer 21, making it possible to dissipate at least part of theheat developing during operation of the laser diode chip 1 through thelayer 17. The heat-conductive layer 17 may particularly also comprise anelectrically-conductive material, since it is insulated from thesemiconductor layer sequence of the laser diode 1 by the dielectricreflection-increasing layer sequence 11. The heat-conductive layer 17may contain ITO, ZnO, GaN, AlN, diamond-like carbon (DLC), SiC orgraphene, for example.

The fifth exemplary embodiment shown in FIG. 5 is different from thefourth exemplary embodiment in that an organic non-stick layer 22 iscontained in the coating 10 as cover layer in place of the hydrophobicorganic cover layer. Advantageously, the non-stick layer 22 reducesadsorption of particles at the laser facet. Otherwise, such particleadsorption could occur as a consequence of the electrostaticinteractions during operation of the laser diode chip 1.

Preferably, the non-stick layer 22 is applied by an MVD method or an MLDmethod and preferably contains a chlorosilane, an amine, an alcohol, acarbon acid, a siloxane or a dimethylamino silane.

In the sixth exemplary embodiment shown in FIG. 6, the coating 10comprises, starting from the laser facet 9, a dielectric protectivelayer 18, a heat conductive layer 17, a reflection-increasing orreflection-decreasing layer sequence 11 and a hydrophobic organic layer20 as cover layer. The functions and advantageous configurations of theindividual layers correspond to the exemplary embodiments describedabove and will thus not be explained in further detail.

In the seventh exemplary embodiment shown in FIG. 7, the coating 10comprises, starting from the laser facet 9, a reflection-increasing orreflection-decreasing layer sequence 11, a first organic diffusionbarrier layer 21 a, a heat-conductive layer 17, a second organicdiffusion barrier layer 21 b and a hydrophobic organic cover layer 20.In this exemplary embodiment, the heat-conductive layer 17 is arrangedbetween two organic diffusion barrier layers 21 a, 21 b, the latterbeing elastic and thus being capable of compensating atemperature-dependent expansion of the heat-conductive layer 17preferably in the elastic expansion range. The functions andadvantageous configurations of the individual layers correspond to theexemplary embodiments described above and will thus not be explained infurther detail.

In the other exemplary embodiment shown in FIG. 8, the coatingcomprises, starting from the laser facet 9, a dielectric protectivelayer 18, a reflection-increasing or reflection-decreasing layersequence 11, a heat-conductive layer 17, an organic diffusion barrierlayer 21 and a hydrophobic organic layer 20 as a cover layer. In placeof the hydrophobic organic cover layer 20, an organic non-stick layercould serve as cover layer just as well. The functionality of theindividual layers corresponds to the exemplary embodiments describedabove and will thus not be explained in further detail.

The invention is not limited by the description with reference to theexemplary embodiments. The invention rather comprises each and every newfeature as well as any combination of features, which particularlyincludes any combination in the patent claims, even though the featureor the combination is not explicitly stated in the patent claims orexemplary embodiments.

1-17. (canceled)
 18. A laser diode chip having a laser facet, whichcomprises a coating, wherein the coating comprises an inorganic layerand an organic layer.
 19. The laser diode chip according to claim 18,wherein the organic layer comprises a diffusion barrier layer.
 20. Thelaser diode chip according to claim 19, wherein the inorganic layercomprises a heat-conductive layer, wherein the coating comprises aplurality of inorganic layers, which are at least partially arranged ina reflection-increasing or reflection-decreasing layer sequence, andwherein the heat-conductive layer is arranged between thereflection-increasing or reflection-decreasing layer sequence and thediffusion barrier layer.
 21. The laser diode chip according to claim 18,wherein the organic layer comprises an alkane, alkene, alkyne, acycloalkane, cycloalkene, a polyamide or an aluminum alkoxide.
 22. Thelaser diode chip according to claim 18, wherein the organic layercomprises an organic cover layer.
 23. The laser diode chip according toclaim 22, wherein the organic cover layer is a hydrophobic layer or anon-stick layer.
 24. The laser diode chip according to claim 23, whereinthe organic cover layer has a contact angle for water greater than 90°.25. The laser diode chip according to claim 22, wherein the organiccover layer contains carbon nanotubes, an organic fluorine or sulfurcompound, a thiol, a silane, a chlorosilane, an amine, an alcohol, acarbon acid, a siloxane or a dimethylamino silane.
 26. The laser diodechip according to claim 18, wherein the inorganic layer comprises aheat-conductive layer.
 27. The laser diode chip according to claim 26,wherein the heat-conductive layer is arranged between a first organicdiffusion barrier layer and a second organic diffusion barrier layer.28. The laser diode chip according to claim 26, wherein theheat-conductive layer comprises a transparent conductive oxide, ITO,ZnO, GaN, AlN, diamond-like carbon (DLC), SiC or graphene.
 29. The laserdiode chip according to claim 18, wherein the inorganic layer comprisesa dielectric protective layer that is in direct contact with the laserfacet.
 30. The laser diode chip according to claim 29, wherein thedielectric protective layer is an ALD-layer.
 31. The laser diode chipaccording to claim 18, wherein the inorganic layer comprises areflection-increasing or a reflection-decreasing layer.
 32. The laserdiode chip according to claim 18, wherein the coating comprises aplurality of inorganic layers, which are at least partially arranged ina reflection-increasing or reflection-decreasing layer sequence.
 33. Thelaser diode chip according to claim 32, wherein thereflection-increasing or reflection-decreasing layer sequence containsboth inorganic layers and organic layers.
 34. The laser diode chipaccording to claim 18, wherein the inorganic layer comprises at leastone material selected from the group consisting of SiO₂, Al₂O₃, TiO₂,Ta₂O₅, Si₃N₄, ZrO₂, HfO₂, Nb₂O₅, Y₂O₃, Ho₂O₃, CeO₃, Lu₂O₃, V₂O₅, HfZrO,MgO, TaC, ZnO, CuO, In₂O₃, Yb₂O₃, Sm₂O₃, Nd₂O₃, Sc₂O₃; B₂O₃, Er₂O₃,Dy₂O₃, Tm₂O₃, SrTiO₃, BaTiO₃, PbTiO₃, PbZrO₃, Ga₂O₃, HfAlO, and HfTaO.35. A laser diode chip having a laser facet, which comprises a coating,wherein the coating comprises a plurality of inorganic layers and anorganic layer; wherein the inorganic layers comprise a heat-conductivelayer; wherein the heat-conductive layer comprises a transparentconductive oxide, ITO, ZnO, GaN, AlN, diamond-like carbon (DLC), SiC orgraphene; wherein the inorganic layers comprise a reflection-increasingor reflection-decreasing layer sequence; wherein the number of layers inthe reflection-increasing or reflection-decreasing layer sequence rangesbetween 2 and 50; and wherein the heat-conductive layer is arrangedbetween the reflection-increasing or reflection-decreasing layersequence and the organic layer.
 36. The laser diode chip according toclaim 35, wherein the organic layer comprises an organic cover layer.37. The laser diode chip according to claim 35, wherein the organiclayer comprises a diffusion barrier layer.
 38. The laser diode chipaccording to claim 35, wherein the number of layers in thereflection-increasing or reflection-decreasing layer sequence rangesbetween 4 and 20.